rev.3.00, apr.22.2 004, page 1 of 8 haf2025(l), haf2025(s) silicon n channel power mos fet power switching rej03g0145-0300z rev.3.00 apr.22.2004 descriptions this fet has the over temperature shut?down capability sensin g to the junction temperature. this fet has the built?in over temperature shut?down circuit in the gate area. and this circuit operation to shut?down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. features ? logic level operation (4 to 6 v gate drive) ? high endurance capability against to the short circuit ? built?in the over temperature shut?down circuit ? latch type shut?down operation (need 0 voltage recovery) outline 1. gate 2. drain 3. source 4. drain d s g gate resistor temperature sensing circuit latch circuit gate shutdown circuit 1 2 3 44 1 2 3 dpak-2 dpak-s
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 2 of 8 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 16 v gate to source voltage v gss ?2.5 v drain current i d 15 a drain peak current i d(pulse) note1 30 a body-drain diode reverse drain current i dr 15 a channel dissipation pch note2 40 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25 c typical operation characteristics (ta = 25c) item symbol min typ max unit test conditions input voltage v ih 3.5 ? ? v v il ??1.2v input current i ih1 ? ? 100 a vi = 8v, v ds = 0 (gate non shut down) i ih2 ? ? 50 a vi = 3.5v, v ds = 0 i il ? ? 1 a vi = 1.2v, v ds = 0 input current i ih(sd)1 ?0.8?mavi = 8v, v ds = 0 (gate shut down) i ih(sd)2 ? 0.35 ? ma vi = 3.5v, v ds = 0 shut down temperature t sd ? 175 ? c channel temperature gate operation voltage v op 3.5 ? 12 v
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 3 of 8 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions i d1 1??av gs = 3.5 v, v ds = 2 v drain current i d2 ??10mav gs = 1.2 v, v ds = 2 v drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 v (br)gss 16 ? ? v i g = 800 a, v ds = 0 gate to source breakdown voltage v (br)gss ?2.5 ? ? v i g = ?100 a, v ds = 0 i gss1 ? ? 100 av gs = 8 v, v ds = 0 i gss2 ??50 av gs = 3.5 v, v ds = 0 i gss3 ??1 av gs = 1.2 v, v ds = 0 gate to source leak current i gss4 ? ? ?100 av gs = ?2.4 v, v ds = 0 i gs(op)1 ?0.8?mav gs = 8 v, v ds = 0 input current (shut down) i gs(op)2 ?0.35?mav gs = 3.5 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.4 ? 2.6 v v ds = 10 v, i d = 1 ma forward transfer admittance |y fs |1.516?s i d = 7.5 a, v ds = 10 v note3 r ds(on) ?4160m ? i d = 7.5 a, v gs = 5 v note3 static drain to source on state resistance r ds(on) ?3445m ? i d = 7.5 a, v gs = 10 v note3 output capacitance coss ? 365 ? pf v ds = 10 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ?7.4? sv gs = 5 v, i d = 7.5 a, rise time t r ?43? sr l = 4 ? turn-off delay time t d(off) ?2 ? s fall time t f ?2.5? s body?drain diode forward voltage v df ?0.9?v i f = 15 a, v gs = 0 body?drain diode reverse recovery time t rr ? 100 ? ns i f = 15 a, v gs = 0 dif/ dt =50 a/s over load shut down operation time note4 t os1 ?0.93?msv gs = 5 v, v dd = 16 v notes: 3. pulse test 4. including the junction temperature ri se of the over loaded condition
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 4 of 8 main characteristics drain to source voltage v ds (v) 10 20 2 5 50 100 200 1 0.2 0.5 0.5 1 2 5 10 20 50 100 drain current i d (a) maximum safe operation area 50 40 30 20 10 0 246810 10 v 8 v v gs = 3.5 v 6 v 5 v 4 v drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test 50 40 30 20 10 048 2610 25 c 75 c gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 40 30 20 10 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating 100 s 1 ms pw = 10 ms dc operation (tc = 25 c ) ta = 25 c tc = ?25 c 1000 800 600 400 200 0246810 5 a 7.5 a i d = 15 a pulse test gate to source voltage v gs (v) drain source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) 500 1 2 5 10 20 50 100 200 100 20 50 10 v gs = 5 v pulse test drain current i d (a) static drain to source on state resistance r ds(on) (m ? ) static drain to source state resistance vs. drain current v gs = 10 v operation in this area is limited r ds(on) thermal shut down operation area
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 5 of 8 100 80 60 40 20 -25 0 25 75 100 50 125 0 v gs = 5 v 7.5 a 7.5 a pulse test case temperature tc ( c) static drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. temperature i d = 15 a i d = 15 a v gs = 10 v 5 a 5 a 100 20 50 10 2 0.1 1 5 0.2 0.5 0.2 0.1 0.5 1 2 5 10 20 50 100 tc = ?25 c 25 c 75 c drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v ds = 10 v pulse test 0.1 0.2 0.5 1 2 5 10 20 50 100 1000 200 500 100 20 10 50 0.1 0.2 0.5 1 2 5 10 20 50 100 100 20 50 10 2 1 5 di / dt = 50 a / s v gs = 0, ta = 25 c reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time t r v gs = 5 v, v dd = 30 v pw = 300 s, duty < 1% t f t d(on) t d(off) drain current i d (a) switching time t ( s) switching characteristics 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 v gs = 5 v 0, ?5 v source to drain voltage v ds (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test 10000 1000 100 10 0 20 40 60 80 100 v gs = 0 f = 1 mhz coss capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 6 of 8 200 180 160 140 120 0 gate to source voltage v gs (v) shutdown case temperature tc ( c) 100 2 46810 i = 0.5 a d shutdown case temperature vs. gate to source voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 3.125c/w, tc = 25c tc = 25c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 20 15 10 5 0 gate to source voltage v gs (v) gate to source voltage vs. shutdown time of load-short test 100 10000 shutdown time of load-short test pw ( s) 300 1000 3000 v dd = 16 v vin monitor d.u.t. vin 5v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveform
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 7 of 8 package dimensions package code jedec jeita mass (reference value) dpak (l)-(2) ? ? 0.42 g 6.5 0.5 2.3 0.2 0.55 0.1 1.2 0.3 0.55 0.1 5.5 0.5 1.7 0.5 16.2 0.5 4.7 0.5 5.4 0.5 1.15 0.1 2.29 0.5 2.29 0.5 0.8 0.1 0.55 0.1 3.1 0.5 (0.7) as of january, 2003 unit: mm package code jedec jeita mass (reference value) dpak (s) ? conforms 0.28 g as of january, 2003 unit: mm 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 0 ? 0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 (1.2) 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) 1.0 max. (0.1) (0.1)
haf2025(l), haf2025(s) rev.3.00, apr.22.2 004, page 8 of 8 ordering information part name quantity shipping container haf2025-90l max: 100 pcs/ sack sack haf2025-90s max: 100 pcs/ sack sack haf2025-90stl 3000 pcs/ reel embossed tape haf2025-90str 3000 pcs/ reel embossed tape note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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